This part of IEC 63068 provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers.
This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.
